PART |
Description |
Maker |
D1103 D3232 D45D1 D43D6 D45D3 D45D5 DG189AP/883B D |
Refresh Counter TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 4A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3 Non-Muxed Address DRAM Muxed地址内存 Analog Switch 模拟开 Peripheral Miscellaneous 周边杂项
|
Intersil, Corp. Rochester Electronics, LLC
|
BU806 BU807 BU807TU |
NPN Epitaxial Silicon Darlington Transistor High Voltage & Fast Switching Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁| 10A条一(c)|3 TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
CZTA14 CZTA64 |
SMD Small Signal Transistor NPN Darlington SMD Small Signal Transistor PNP Darlington SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 4A条一(c)|园区 TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
|
M54583 M54583P M54583PNBSP |
From old datasheet system M54583P Darlington Transistor Array 8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation Mitsubishi Electronics America Inc Mitsubishi Electric Semiconductor
|
2SD768K |
Silicon NPN Darlington Transistor TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 6A I(C) | TO-220AB
|
Hitachi Semiconductor
|
MMBT6427LT1 MMBT6427LT3 MMBT6427LT1-D MMBT6427LT1G |
Darlington Transistor NPN Silicon Small Signal Darlington Darlington Transistor(NPN Silicon)
|
ON Semiconductor
|
JANTXV2N7370 2N7370 JAN2N7370 JANTX2N7370 |
NPN Darlington Transistor NPN DARLINGTON HIGH POWER SILICON TRANSISTOR 12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA
|
MICROSEMI[Microsemi Corporation] MICROSEMI CORP-LAWRENCE
|
BU323A BU323 |
10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A. 10-Ampere N-P-N Monolithic Darlington Power Transistors
|
General Electric Solid State GESS[GE Solid State]
|
2SB1418/2SB1418A 2SB1418AQ 2SB1418P |
2SB1418. 2SB1418A - PNP Transistor Darlington TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-221VAR 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁|甲一(c)|21VAR TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 2A I(C) | TO-221VAR 晶体管|晶体管|达林顿|进步党| 60V的五(巴西)总裁|甲一(c)|21VAR
|
Atmel, Corp. Amphenol, Corp.
|